Influence of the implantation of C+ ions on photoluminescence and electrical properties of GaAs

Ion implantation of carbon (C) into extremely pure GaAs grown by molecular‐ beam epitaxy is carried out over a wide range of C atomic concentrations [C], from 1×1016 to 5×1019 cm−3. The impurity levels in the implanted layer are investigated by using photoluminescence (PL) and Hall‐effect measurements. Below the well‐defined exciton luminescence lines, one broad emission band, namely [g‐g], is found to be exclusively attributable to acceptor impurities and is dominant for [C] lower than 3×1017 cm−3. However, a decrease of its intensity and a ‘‘locking’’ of its emission energy shift is observed for [C] higher than this value. A carrier transport mechanism is found to be relevant to the C acceptor level for C atoms at As sites, and deep acceptors caused by residual radiation defects. The concentration of substitutional C atoms is nearly coincident with [C] up to 1×1017 cm−3, but the activation efficiency for [C]=1×1018 cm−3 decreases by about 13%. The decrease of overall PL intensity and the locking of the ...

[1]  D. Rode,et al.  Characterization of residual carbon in semi‐insulating GaAs , 1988 .

[2]  J. C. Garcia,et al.  Shallow-acceptor isoelectronic-impurity complexes in GaAs , 1988 .

[3]  Gil,et al.  Electronic structure of molecular-beam-epitaxy growth-induced defects in GaAs. , 1988, Physical review. B, Condensed matter.

[4]  Y. Mitsuhashi,et al.  Liquid‐phase epitaxy of heavily Mg‐doped GaAs: Formation of a new near‐band‐edge emission exclusively pertinent to acceptor impurities , 1987 .

[5]  S. Shigetomi,et al.  A theoretical explanation for the red energy shift of a newly discovered, exclusively acceptor‐associated emission in GaAs , 1987 .

[6]  Y. Mitsuhashi,et al.  Photoluminescence of Mg‐doped GaAs grown by molecular beam epitaxy using Mg3As2 as a Mg source: A comparison with Mg+ ion implantation , 1986 .

[7]  Y. Mitsuhashi,et al.  Selective self‐optical compensation effect for a newly discovered acceptor‐associated emission in Zn+ ion‐implanted GaAs , 1986 .

[8]  K. Kudo,et al.  Observation of new common emissions in GaAs produced by ion implantation of four acceptor impurities , 1986 .

[9]  A. Beye,et al.  Nature of the 1.5040–1.5110‐eV emission band in GaAs , 1985 .

[10]  K. Kudo,et al.  Photoluminescence of very dilutely C+ ion‐implanted GaAs , 1985 .

[11]  H. Tanoue,et al.  New emission lines in highly carbon ion-implanted GaAs , 1985 .

[12]  B. K. Shin.  Carbon‐ion‐implanted gallium arsenide , 1976 .

[13]  A. Immorlica,et al.  Capless annealing of ion‐implanted GaAs , 1976 .

[14]  G. L. Pearson,et al.  Properties of vacancy defects in GaAs single crystals , 1975 .

[15]  B L H Wilson,et al.  Gallium Arsenide and Related Compounds , 1973 .

[16]  G. L. Pearson,et al.  Gamma‐Radiation Damage in Epitaxial Gallium Arsenide , 1972 .

[17]  C. M. Wolfe,et al.  Ionized Impurity Density in n‐Type GaAs , 1970 .

[18]  C. S. Fuller,et al.  Hall‐Effect Levels Produced in Te‐Doped GaAs Crystals by Cu Diffusion , 1967 .

[19]  M. Sturge.  Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eV , 1962 .

[20]  F. D. Rosi,et al.  Properties of p‐Type GaAs Prepared by Copper Diffusion , 1960 .