Nonlinear Transistor Model Parameter Extraction Techniques: Frontmatter

1. Introduction M. Rudolph 2. DC and thermal modeling: III-V FETs and HBTs M. Iwamoto, J. Xu and D. E. Root 3. Extrinsic parameter and parasitic elements in III-V HBT and HEMT modeling S. R. Nedeljkovic, W. J. Clausen, F. Kharabi, J. R. F. McMacken and J. M. Gering 4. Uncertainties in small-signal equivalent circuit modeling C. Fager, K. Andersson and M. Ferndahl 5. The large-signal model: theoretical foundations, practical considerations, and recent trends D. E. Root, J. Horn, J. Xu and M. Iwamoto 6. Large and packaged transistors J. Engelmann, F.-J. Schmuckle and M. Rudolph 7. Characterization and modeling of dispersive effects O. Jardel, R. Sommet, J.-P. Teyssier and R. Quere 8. Optimizing microwave measurements for model construction and validation D. Schreurs, M. Myslinski and G. Crupi 9. Practical statistical simulation for efficient circuit design P. Zampardi, Y. Yang, J. Hu, B. Li, M. Fredriksson, K. Kwok and H. Shao 10. Noise modeling M. Berroth.