Electrografted seed layers for metallization of deep TSV structures

This paper describes electrografted (eG) copper seed layers deposited on a wide range of Through Silicon Via (TSV) dimensions. Deposition is achieved on patterned substrates insulated with different materials (SiO2 for example) and covered by titanium or tantalum based diffusion barriers deposited by PVD, CVD or ALD. This eG technique is fully compatible with standard electroplating tools, either at 200mm or 300mm scale.

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