Gate architecture design for enhancement mode p-GaN gate HEMTs for 200 and 650V applications
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S. Decoutere | S. Stoffels | S. You | M. Zhao | S. Decoutere | N. Posthuma | S. Stoffels | S. You | H. Liang | H. Liang | N. E. Posthuma | M. Zhao
[1] Eldad Bahat Treidel,et al. Normally-off GaN Transistors for Power Applications , 2014 .
[2] H. Ishida,et al. Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation , 2007, IEEE Transactions on Electron Devices.
[3] S. Decoutere,et al. Impact of Mg out-diffusion and activation on the p-GaN gate HEMT device performance , 2016, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
[4] Martine Baelmans,et al. Distributed electro-thermal model based on fast and scalable algorithm for GaN power devices and circuit simulations , 2017, 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
[5] Alexander Satka,et al. Effective 3-D Device Electrothermal Simulation Analysis of Influence of Metallization Geometry on Multifinger Power HEMTs Properties , 2017, IEEE Transactions on Electron Devices.
[6] A. Monti,et al. An Efficient High-Frequency Drive Circuit for GaN Power HFETs , 2009, IEEE Transactions on Industry Applications.
[7] Masahiro Hikita,et al. Through recessed and regrowth gate technology for realizing process stability of GaN-GITs , 2016, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
[8] U-In Chung,et al. High threshold voltage p-GaN gate power devices on 200 mm Si , 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).