Efficiency enhancement for distributed power amplifier design with GaN HEMT technology

This paper presents the new design of distributed amplifier (DA) with control mechanism to enhance the efficiency performance by tuning the impedance at the gate termination adjustment network and applying drain line tapering topology. This distributed power amplifier (DPA) system is design based on the GaN high electron mobility (HEMT) transistor and simulated by using Advanced System Design tool (ADS). The detail of the design has demonstrated and achieved an output power of ∼40 dBm, flat gain at 10 dB, and bandwidth covering 100MHz to 2.4 GHz, with power added efficiency (PAE) of ∼40 %. As a result, this work has demonstrating significant improvement in efficiency over the conventional DA and offers wide band operation for public safety applications.

[1]  A GaN HEMT Class AB RF Power Amplifier , 2013 .

[2]  L. Kehias,et al.  Wideband, High-Efficiency GaN Power Amplifiers Utilizing a Non-Uniform Distributed Topology , 2007, 2007 IEEE/MTT-S International Microwave Symposium.

[3]  James B. Beyer,et al.  MESFET Distributed Amplifier Design Guidelines , 1984 .

[4]  Ernesto Limiti,et al.  Dual Fed Distributed Amplifier With Controlled Termination Adjustment , 2013 .

[5]  B. Stengel,et al.  Distributed Amplifier with Narrowband Amplifier Efficiency , 2007, 2007 IEEE/MTT-S International Microwave Symposium.

[6]  Narendra Kumar A L Aridas,et al.  Distributed Power Amplifiers for RF and Microwave Communications , 2015 .

[7]  W.R. Hewlett,et al.  Distributed Amplification , 1948, Proceedings of the IRE.

[8]  L. D. Reynolds,et al.  A Monolithic GaAs 1-13-GHz Traveling-Wave Amplifier , 1982 .

[9]  James J. Komiak,et al.  Wideband power amplifiers - 1948 to the present day , 2015, 2015 IEEE MTT-S International Microwave Symposium.

[10]  Matthias Seelmann-Eggebert,et al.  Broadband low-noise GaN HEMT TWAs using an active distributed drain bias circuit , 2015, 2015 10th European Microwave Integrated Circuits Conference (EuMIC).

[11]  Serdar Ozoguz,et al.  Distributed wideband power amplifier using reactive coupled line feedback structure , 2015, 2015 2nd International Conference on Knowledge-Based Engineering and Innovation (KBEI).

[12]  M. Higashiwaki,et al.  Two-Stage High-Gain High-Power Distributed Amplifier Using Dual-Gate GaN HEMTs , 2011, IEEE Transactions on Microwave Theory and Techniques.

[13]  A.S. Ibrahim,et al.  Design Guidelines for a Novel Tapered Drain Line Distributed Power Amplifier , 2006, 2006 European Microwave Conference.

[14]  S. Lucyszyn,et al.  RFIC and MMIC Design and Technology , 2001 .