Relaxed template for fabricating regularly distributed quantum dot arrays

Relaxed SiGe thin films are used as templates to control the nucleation of three-dimensional Ge islands on Si(100) substrates. Using the relaxed template, Ge islands form a rectangular array with all islands located exclusively above the intersections of dislocations. The registration is lost when the Ge growth temperature is lowered to 300 °C, and the Ge coverage is decreased to 0.4 nm.