Two-dimensional pattern formation using graphoepitaxy of PS-b-PMMA block copolymers for advanced FinFET device and circuit fabrication.

Directed self-assembly (DSA) of lamellar phase block-co-polymers (BCPs) can be used to form nanoscale line-space patterns. However, exploiting the potential of this process for circuit relevant patterning continues to be a major challenge. In this work, we propose a way to impart two-dimensional pattern information in graphoepitaxy-based lamellar phase DSA processes by utilizing the interactions of the BCP with the template pattern. The image formation mechanism is explained through the use of Monte Carlo simulations. Circuit patterns consisting of the active region of Si FinFET transistors, referred to as Si "fins", were fabricated to demonstrate the applicability of this technique to the formation of complex patterns. The quality of the Si fin features produced by this process was validated by demonstrating the first functional DSA-patterned FinFET devices with 29 nm-pitch fins.

[1]  Frank S. Bates,et al.  Model ABC triblock copolymers and blends near the order-disorder transition , 2002 .

[2]  K. Maitra,et al.  Sub-25nm FinFET with advanced fin formation and short channel effect engineering , 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.

[3]  Lars W. Liebmann,et al.  Design and manufacturability tradeoffs in unidirectional and bidirectional standard cell layouts in 14 nm node , 2012, Advanced Lithography.

[4]  Phil Oldiges,et al.  Modeling of width-quantization-induced variations in logic FinFETs for 22nm and beyond , 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.

[5]  B. Yang,et al.  FinFET performance advantage at 22nm: An AC perspective , 2008, 2008 Symposium on VLSI Technology.

[6]  Y. Zhang,et al.  Directed Assembly of Lamellae‐ Forming Block Copolymers by Using Chemically and Topographically Patterned Substrates , 2007 .

[7]  Sebastian Engelmann,et al.  Sub-30 nm pitch line-space patterning of semiconductor and dielectric materials using directed self-assembly , 2012 .

[8]  Caroline A. Ross,et al.  High-Aspect-Ratio Perpendicular Orientation of PS-b-PDMS Thin Films under Solvent Annealing. , 2012, ACS macro letters.

[9]  Grant D. Smith,et al.  Phase separation in binary mixtures containing polymers: A quantitative comparison of single‐chain‐in‐mean‐field simulations and computer simulations of the corresponding multichain systems , 2005 .

[10]  Joy Y. Cheng,et al.  Simple and versatile methods to integrate directed self-assembly with optical lithography using a polarity-switched photoresist. , 2010, ACS nano.

[11]  C. T. Black.  Self-aligned self assembly of multi-nanowire silicon field effect transistors , 2005 .

[12]  G. Fredrickson,et al.  Defectivity in Laterally Confined Lamella-Forming Diblock Copolymers: Thermodynamic and Kinetic Aspects , 2012 .

[13]  C. Auth,et al.  A 22nm high performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors , 2012, 2012 Symposium on VLSI Technology (VLSIT).

[14]  Robert L. Bruce,et al.  Advanced plasma etch for the 10nm node and beyond , 2013, Advanced Lithography.

[15]  Hiroshi Yamaguchi,et al.  Two‐Dimensional Patterning of Flexible Designs with High Half‐Pitch Resolution by Using Block Copolymer Lithography , 2008 .

[16]  Sebastian Engelmann,et al.  Pattern transfer of directed self-assembly patterns for CMOS device applications , 2013 .