Characterization of SONOS oxynitride nonvolatile semiconductor memory devices

[1]  J. R. Cricchi,et al.  Characterization of thin-oxide MNOS memory transistors , 1972 .

[2]  Ingemar Lundström,et al.  Discharge of MNOS structures , 1973 .

[3]  C. Svensson,et al.  Discharge of MNOS structures at elevated temperatures , 1976 .

[4]  A. Roy,et al.  A microcomputer-controlled multichannel programmable pattern generator , 1987, IEEE Transactions on Instrumentation and Measurement.

[5]  Ken Uchida,et al.  Yield and reliability of MNOS EEPROM products , 1989 .

[6]  Yoshiaki Kamigaki,et al.  A new portrayal of electron and hole traps in amorphous silicon nitride , 1990 .

[7]  Chemical Composition, Charge Trapping, and Memory Properties of Oxynitride Films for MNOS Devices , 1990 .

[8]  P. McWhorter,et al.  Modeling the memory retention characteristics of silicon‐nitride‐oxide‐silicon nonvolatile transistors in a varying thermal environment , 1990 .

[9]  Dan Xu,et al.  Effects of oxygen content and oxide layer thickness on interface state densities for metal‐oxynitride‐oxide‐silicon devices , 1991 .

[10]  M. White,et al.  Determination of the trapped charge distribution in scaled silicon nitride MONOS nonvolatile memory devices by tunneling spectroscopy , 1991 .

[11]  Yin Hu,et al.  Charge retention in scaled SONOS nonvolatile semiconductor memory devices—Modeling and characterization☆ , 1993 .

[12]  V. J. Kapoor,et al.  MNOS memory technology with oxynitride thin films , 1994 .

[13]  Yang Yang,et al.  Charge retention of scaled SONOS nonvolatile memory devices at elevated temperatures , 2000 .

[14]  J. Bu,et al.  On the go with SONOS , 2000 .

[15]  B. Eitan,et al.  NROM: A novel localized trapping, 2-bit nonvolatile memory cell , 2000, IEEE Electron Device Letters.

[16]  J. Bu,et al.  Design considerations in scaled SONOS nonvolatile memory devices , 2001 .