InSb-GaAsP infrared to visible light converter

A solid-state sandwich composed of a capacitor-InSb diode detector-GaAsP diode emitter is proposed and demonstrated for efficiently converting infrared signals of wavelengths to 5.3 µ into visible 0.6- to 0.7-µ radiation. The device integrates the low-level incident radiation and delivers it to the emitter as high-current pulses.