Analysis of the subthreshold slope and the linear transconductance techniques for the extraction of the capacitance coupling coefficients of floating-gate devices

A critical investigation of the relationship between the floating gate and the accessible terminal voltages reveals that the gate coupling coefficient is overestimated by the traditional expressions obtained from the approximate analysis of the subthreshold slope and the linear transconductance techniques. The investigation further indicates that the subthreshold slope technique is preferred, because the corrections can be easily estimated using the results of auxiliary measurements involving the source and drain coupling coefficients.<<ETX>>

[1]  M. Wada,et al.  Limiting factors for programming EPROM of reduced dimensions , 1980, 1980 International Electron Devices Meeting.

[2]  Man Wong,et al.  Optimization of a source-side-injection FAMOS cell for flash EPROM applications , 1991, International Electron Devices Meeting 1991 [Technical Digest].

[3]  B. Eitan,et al.  Analysis and modeling of floating-gate EEPROM cells , 1986, IEEE Transactions on Electron Devices.

[4]  L. Ravazzi,et al.  A novel method for the experimental determination of the coupling ratios in submicron EPROM and flash EEPROM cells , 1990, International Technical Digest on Electron Devices.

[5]  Chenming Hu,et al.  Inversion-layer capacitance and mobility of very thin gate-Oxide MOSFET's , 1986, IEEE Transactions on Electron Devices.

[6]  K. Prall,et al.  Characterization and suppression of drain coupling in submicrometer EPROM cells , 1987, IEEE Transactions on Electron Devices.