Struktura pasmowa i wzmocnienie optyczne studni kwantowych GeSn/Ge
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[1] Krishna C. Saraswat,et al. Achieving direct band gap in germanium through integration of Sn alloying and external strain , 2013 .
[2] A. G. Rodríguez,et al. Determination of the optical energy gap of Ge1−xSnx alloys with 0 , 2004 .
[3] J. Misiewicz,et al. Electronic band structure of compressively strained Ge1−xSnx with x < 0.11 studied by contactless electroreflectance , 2015 .
[4] Yi-Chiau Huang,et al. Demonstration of a Ge/GeSn/Ge quantum-well microdisk resonator on silicon: enabling high-quality Ge(Sn) materials for micro- and nanophotonics. , 2014, Nano letters.
[5] Gregor Mussler,et al. GeSn Heterojunction LEDs on Si Substrates , 2014, IEEE Photonics Technology Letters.
[6] H. S. Mączko,et al. Material gain engineering in GeSn/Ge quantum wells integrated with an Si platform , 2016, Scientific Reports.
[7] Wei Du,et al. Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence , 2014 .
[8] M. S. Wartak,et al. Band structure and the optical gain of GaInNAs/GaAs quantum wells modeled within 10-band and 8-band kp model , 2013 .