Scalable small-signal model for BJT self-heating

The effects of self-heating on BJT (bipolar junction transistor) behavior are demonstrated through measurement and simulation. Most affected are the small-signal parameters Y/sub 22/ and Y/sub 12/. A frequency-domain solution to the heat-flow equation is presented. It applies to any rectangular emitter geometry. This model, although simple enough for CAD, predicts thermal spreading impedance with good accuracy for a wide range of frequencies.<<ETX>>