Band to band radiative recombination in O2-doped n-type GaAs has been investigated at 20.8 and 4.2 °K using photomagnetoelectric (PME) and photoconductive (PC) methods. Capture rates Br determined from the present experimental data are in excellent agreement with that computed from the Hall's direct radiative recombination formula [4]. The results are Br = 1.15 × 10−8 cm3/s at 20.8 °K and 1.23 × 10−7 cm3/s at 4.2 °K.
Es wurde die strahlende Rekombination von Band–Band-Ubergangen in O2-dotiertem, n-leitendem GaAs bei 20,8 und 4,2 °K mit photomagnetoelektrischen (PME) und Photoleitungs-(PC)-Methoden untersucht. Die aus den experimentellen Werten bestimmten Einfangraten Br befinden sich in ausgezeichneter Ubereinstimmung mit denen aus der Hallschen Formel [4] fur direkte strahlende Rekombination. Die Ergebnisse sind: Br = 1,15 × X 10−8 cm3/s bei 20,8 °K und 1,23 × 10−7 cm3/s bei 4,2 °K.
[1]
C. Huang,et al.
Investigation of the Recombination and Trapping Processes of Photoinjected Carriers in Semi‐Insulating Cr‐Doped GaAs Using PME and PC Methods
,
1972
.
[2]
C. Huang,et al.
Low-Temperature Photomagnetoelectric and Photoconductive Effects in n -Type InAs
,
1971
.
[3]
J. C. Irvin,et al.
Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K
,
1968
.
[4]
I. Kudman,et al.
Carrier recombination in gallium arsenide
,
1965
.
[5]
S. Mayburg.
Direct recombination in GaAs and some consequences in transistor design
,
1961
.
[6]
R. Braunstein,et al.
Radiative Transitions in Semiconductors
,
1955
.