Plasma immersion ion implantation—a fledgling technique for semiconductor processing

Abstract Plasma immersion ion implantation (PIII) is a cluster compatible doping and processing tool offering many inherent advantages over conventional beamline ion implantation. When first introduced in the late 1980s, the technique was primarily used to enhance the surface mechanical properties of metals. Recently, a substantial amount of research activities have focused on microelectronics and have led to a number of very interesting applications, such as the formation of shallow junction, synthesis of silicon-on-insulator, large area implantation, trench doping, conformal deposition, and so on. In this paper, we will review the principles of PIII, the dynamic sheath model for various kinds of plasma, reactor designs, recent applications in the area of microelectronics, as well as the future of PIII pertaining to semiconductor materials and processing.

[1]  M. Kubota,et al.  New doping method for subhalf micron trench sidewalls by using an electron cyclotron resonance plasma , 1988 .

[2]  S. Qin,et al.  An evaluation of contamination from plasma immersion ion implantation on silicon device characteristics , 1994 .

[3]  R. Buchanan,et al.  Enhanced pitting corrosion resistance of 304L stainless steel by plasma ion implantation , 1994 .

[4]  Michael A. Lieberman,et al.  Model of plasma immersion ion implantation , 1989 .

[5]  Michael A. Guerra.  Development of second generation oxygen implanter , 1992 .

[6]  M. Lieberman,et al.  Pd/Si plasma immersion ion implantation for selective electroless copper plating on SiO2 , 1992 .

[7]  R. Kakoschke,et al.  Trench sidewall implantation with a parallel scanned ion beam , 1990 .

[8]  J. Colinge.  Silicon-on-Insulator Technology: Materials to VLSI , 1991 .

[9]  J. Colinge.  Silicon-on-Insulator Technology , 1991 .

[10]  D. Greve,et al.  Short time electron cyclotron resonance hydrogenation of polycrystalline silicon thin‐film transistor structures , 1990 .

[11]  C. Osburn,et al.  Materials and device issues in the formation of sub-100-nm junctions , 1993 .

[12]  J. Ziegler,et al.  stopping and range of ions in solids , 1985 .

[13]  J. Matossian.  Plasma ion implantation technology at Hughes Research Laboratories , 1994 .

[14]  Boron doping of silicon by ArF excimer laser irradiation in B2H6 , 1990 .

[15]  Jae Koo Lee,et al.  Kinetic Simulation of the Transient Sheath in Plasma Ion Implantation , 1992 .

[16]  S. Wolf,et al.  Silicon Processing for the VLSI Era , 1986 .

[17]  E. E. Jones,et al.  Anomalous behavior of shallow BF3 plasma immersion ion implantation , 1994 .

[18]  Michael A. Lieberman,et al.  Analytical solution for capacitive RF sheath , 1988 .

[19]  J. Conrad,et al.  Measurements of spatial and temporal sheath evolution for spherical and cylindrical geometries in plasma source ion implantation , 1991 .

[20]  Charles F. McMillan,et al.  Velocimetry of fast surfaces using Fabry–Perot interferometry , 1988 .

[21]  M. Lieberman,et al.  Plasma immersion ion implantation of SiF4 and BF3 for sub‐100 nm P+/N junction fabrication , 1991 .

[22]  A. Lichtenberg,et al.  Principles of Plasma Discharges and Materials Processing , 1994 .

[23]  G. Emmert.  Model for expanding sheaths and surface charging at dielectric surfaces during plasma source ion implantation , 1994 .

[24]  P. C. Jong,et al.  Helium desorption/permeation from bubbles in silicon: A novel method of void production , 1987 .

[25]  U. Mitra,et al.  Mechanism of Plasma Hydrogenation of Polysilicon Thin Film Transistors , 1991 .

[26]  Y. Suetsugu,et al.  Temporal Behaviour of ECR Plasmas Produced by a Lisitano Coil , 1984 .

[27]  S. Qin,et al.  Dynamic sheath model of collisionless multispecies plasma immersion ion implantation , 1995 .

[28]  D. Chapek,et al.  Structural characterization of plasma‐doped silicon by high resolution x‐ray diffraction , 1994 .

[29]  K. Sridharan,et al.  Overview of plasma source ion implantation research at University of Wisconsin–Madison , 1994 .

[30]  T.-Y. Huang,et al.  Passivation kinetics of two types of defects in polysilicon TFT by plasma hydrogenation , 1991, IEEE Electron Device Letters.

[31]  N. Cheung,et al.  Nucleation mechanism of SPIMOX (separation by plasma implantation of oxygen) , 1996 .

[32]  J. Wong-Leung,et al.  Gettering of Au to dislocations and cavities in silicon , 1995 .

[33]  C. Osburn,et al.  Ultra Shallow Junction Formation Using Diffusion from Silicides I . Silicide Formation, Dopant Implantation and Depth Profiling , 1992 .

[34]  T. Kamins,et al.  Hydrogenation of transistors fabricated in polycrystalline-silicon films , 1980, IEEE Electron Device Letters.

[35]  S. Qin,et al.  Dose–time relation in BF3 plasma immersion ion implantation , 1995 .

[36]  K. Baert,et al.  Hydrogen Passivation of Polysilicon Thin-Film Transistors by Electron Cyclotron Resonance Plasma , 1993 .

[37]  J. Conrad.  Sheath thickness and potential profiles of ion‐matrix sheaths for cylindrical and spherical electrodes , 1987 .

[38]  Aly E. Fathy,et al.  Microwave properties of highly oriented YBa2Cu3O7−x thin films , 1990 .

[39]  M. Lieberman,et al.  Model of plasma immersion ion implantation for voltage pulses with finite rise and fall times , 1991 .

[40]  N. Cheung.  Plasma immersion ion implantation for ULSI processing , 1991 .

[41]  J. Rocca,et al.  Electron emission from glow-discharge cathode materials due to neon and argon ion bombardment , 1989 .

[42]  Chung Chan,et al.  Hydrogenation of polycrystalline silicon thin film transistors by plasma ion implantation , 1995, IEEE Electron Device Letters.

[43]  J. P. Ruffell,et al.  A high current, high voltage oxygen ion implanter , 1987 .

[44]  N. McGruer,et al.  The response of a microwave multipolar bucket plasma to a high voltage pulse , 1991 .

[45]  M. Lieberman,et al.  Plasma immersion Pd ion implantation seeding pattern formation for selective electroless Cu plating , 1991 .

[46]  B. Wood.  Displacement current and multiple pulse effects in plasma source ion implantation , 1993 .

[47]  Crid Yu,et al.  Trench doping conformality by plasma immersion ion implantation (PIII) , 1994, IEEE Electron Device Letters.

[48]  S. Sze.  Semiconductor Devices: Physics and Technology , 1985 .

[49]  M. Lieberman,et al.  Conformal implantation for trench doping with plasma immersion ion implantation , 1991 .

[50]  C. B. Cooper,et al.  Characteristics of a plasma doping system for semiconductor device fabrication , 1994 .

[51]  Sheau Chen,et al.  Polysilicon TFT technology will solve problems of mobility, pixel size, cost, and yield , 1996 .

[52]  Warren,et al.  Electrical properties of He-implantation-produced nanocavities in silicon. , 1994, Physical review. B, Condensed matter.

[53]  J. Kilner,et al.  Formation of thin silicon films using low energy oxygen ion implantation , 1991 .

[54]  M. Lieberman,et al.  A plasma immersion ion implantation reactor for ULSI fabrication , 1991 .

[55]  T. Akamine,et al.  Composition and Growth Mechanisms of a Boron Layer Formed Using the Molecular Layer Doping Process , 1993 .

[56]  H. Klein,et al.  High current ion implantation by plasma immersion technique , 1995 .

[57]  S. Qin,et al.  The response of a microwave multipolar bucket plasma to a high-voltage pulse with finite rise time , 1992 .

[58]  S. Qin,et al.  Hydrogen etching for semiconductor materials in plasma doping experiments , 1996 .

[59]  S. Qin,et al.  Charging effects in plasma immersion ion implantation for microelectronics , 1995 .

[60]  L. M. Howe,et al.  HELIUM BUBBLES IN SILICON : STRUCTURE AND OPTICAL PROPERTIES , 1995 .

[61]  M. Lieberman,et al.  Sub-100 mn p+/n junction formation using plasma immersion ion implantation , 1991 .

[62]  M. Sadowski.  Plasma confinement with spherical multipole magnetic field , 1967 .

[63]  J. Conrad,et al.  Dose analysis of nitrogen plasma source ion implantation treatment of titanium alloys , 1994 .

[64]  R. Elliman,et al.  Gettering of copper to hydrogen‐induced cavities in silicon , 1995 .

[65]  S. Qin,et al.  An investigation of dopant gases in plasma immersion ion implantation , 1995 .

[66]  N. Cheung,et al.  Metal vapor vacuum arc ion implantation for seeding of electroless Cu plating , 1991 .

[67]  N. Cheung,et al.  Buried oxide formation by plasma immersion ion implantation , 1995 .

[68]  J. Nishizawa,et al.  Ultrashallow, high doping of boron using molecular layer doping , 1990 .

[69]  Antoine Durandet,et al.  Microwave multipolar plasmas excited by distributed electron cyclotron resonance: concept and performance , 1988 .

[70]  Sheng-Lyang Jang,et al.  Modeling of hot-carrier-stressed characteristics of nMOSFETs , 1996 .

[71]  J. Conrad,et al.  Model of plasma source ion implantation in planar, cylindrical, and spherical geometries , 1990 .

[72]  J. R. Conrad,et al.  Plasma source ion-implantation technique for surface modification of materials , 1987 .

[73]  M. Hawley,et al.  Behavior of a Microwave Cavity Discharge over a Wide Range of Pressures and Flow Rates , 1978, IEEE Transactions on Plasma Science.

[74]  E. Richter,et al.  Plasma source ion implantation of oxygen and nitrogen in aluminum , 1994 .

[75]  Heiner Ryssel,et al.  Ion Implantation Techniques , 1982 .

[76]  Charles K. Birdsall,et al.  Particle-in-cell charged-particle simulations, plus Monte Carlo collisions with neutral atoms, PIC-MCC , 1991 .

[77]  C. Hu,et al.  Formation of buried oxide in silicon using separation by plasma implantation of oxygen , 1995 .

[78]  K. Walter.  Nitrogen plasma source ion implantation of aluminum , 1994 .

[79]  D. Kwong,et al.  Shallow junction formation by dopant diffusion from in situ doped polycrystalline silicon chemically vapor deposited in a rapid thermal processor , 1990 .

[80]  G. Emmert,et al.  Numerical simulation of plasma sheath expansion, with applications to plasma‐source ion implantation , 1992 .

[81]  M. Lieberman,et al.  PMOS integrated circuit fabrication using BF3 plasma immersion ion implantation , 1992 .

[82]  Nathan W. Cheung,et al.  Plasma immersion ion implantation reactor design considerations for oxide charging , 1996 .

[83]  S. Qin,et al.  Plasma immersion ion implantation doping experiments for microelectronics , 1994 .

[84]  K. Short,et al.  Nitriding of austenitic stainless steel by plasma immersion ion implantation , 1995 .

[85]  Dim-Lee Kwong,et al.  Silicided shallow junction formation by ion implantation of impurity ions into silicide layers and subsequent drive‐in , 1987 .

[86]  N. Cheung,et al.  Characteristics of sub-100-nm p/sup +//n junctions fabricated by plasma immersion ion implantation , 1993, IEEE Electron Device Letters.

[87]  I. Donnelly,et al.  Plasma immersion ion implantation using plasmas generated by radio frequency techniques , 1988 .

[88]  K. Komvopoulos,et al.  Surface modification of magnetic recording heads by plasma immersion ion implantation and deposition , 1994 .

[89]  M. M. Widner,et al.  Ion Acoustic Wave Excitation and Ion Sheath Evolution , 1970 .

[90]  N. McGruer,et al.  Energy distribution of boron ions during plasma immersion ion implantation , 1992 .