Stress analysis and dimensioning of three resonant convertor topologies

This paper presents a comparative study of the stresses applied to the semiconductors and reactive components making-up resonant convertors working above the resonance eigenfrequency of the oscillatory circuit. The convertors studied are the two basic structures (the series- and parallel-resonant convertors) and the series-parallel resonant convertor with capacitive filter. For each structure the stresses are analysed and the results tabulated. An example of dimensioning of a 1 kW module for each of the structures is given.<<ETX>>