Dead-Time Optimization for Maximum Efficiency

Previously published articles [2, 3] showed that eGaN FETs behave similarly to silicon devices and can be evaluated using the same performance metrics. Although eGaN FETs perform significantly better by most metrics, the eGaN FET ‘body-diode’ forward voltage is higher than its MOSFET counterpart and can be a significant loss component during dead-time. Body diode forward conduction losses alone do not make up all dead-time dependent losses. Diode reverse-recovery and output capacitance losses are also important. In this white paper the importance of dead-time management and the requirements to minimize all dead-time losses are discussed.