Chemical interaction between atomic-layer-deposited HfO2 thin films and the Si substrate
暂无分享,去创建一个
Cheol Seong Hwang | Moonju Cho | Hong-bae Park | C. Hwang | Jaehoon Park | Hong-bae Park | Jaehack Jeong | Moonju Cho | Jaehoo Park | Jaehack Jeong | Kwang Soo Hyun | K. S. Hyun
[1] Doo Young Yang,et al. Interfacial reaction between chemically vapor-deposited HfO2 thin films and a HF-cleaned Si substrate during film growth and postannealing , 2002 .
[2] R. Mckee,et al. Crystalline Oxides on Silicon: The First Five Monolayers , 1998 .
[3] J. Aarik,et al. Influence of substrate temperature on atomic layer growth and properties of HfO2 thin films , 1999 .
[4] H. Hwang,et al. Electrical characteristics of an ultrathin (1.6 nm) TaOxNy gate dielectric , 2000 .
[5] R. Fleming,et al. High dielectric constant Hf–Sn–Ti–O thin films , 1999 .
[6] Eduard A. Cartier,et al. Materials characterization of ZrO2–SiO2 and HfO2–SiO2 binary oxides deposited by chemical solution deposition , 2001 .
[7] G. Wilk,et al. Chemical vapor deposition of HfO2 films on Si(100) , 2002 .