论文信息 - Instability of oxide thin film transistor under electrical-mechanical hybrid stress for foldable display

Instability of oxide thin film transistor under electrical-mechanical hybrid stress for foldable display

Abstract Degradation mechanism of foldable thin film transistors (TFTs) is investigated experimentally by electrical, mechanical and electrical–mechanical hybrid stress experiments. Mechanical and electrical stress environment was set for foldable TFTs and the degradation effect according to the applied stress is investigated and analyzed. Degradation mechanism model that can explain the defect generation is suggested to explain the result of electrical–mechanical hybrid stress experiment.

[1] Yeon-Gon Mo,et al. Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors , 2008 .

[2] G. Gelinck,et al. Electrical Characterization of Flexible InGaZnO Transistors and 8-b Transponder Chip Down to a Bending Radius of 2 mm , 2015, IEEE Transactions on Electron Devices.

[3] R. B. M. Cross,et al. Investigating the stability of zinc oxide thin film transistors , 2006 .

[4] Joan M. Redwing,et al. Measurement of drift mobility in AlGaN/GaN heterostructure field-effect transistor , 1999 .

[5] John F. Muth,et al. Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors , 2008 .

[6] Ilgu Yun,et al. Modeling and Simulation of Flexible Oxide Thin Film Transistors , 2014 .

[7] Safa Kasap,et al. Principles of electronic materials and devices , 2000 .

[8] D. Neamen. Semiconductor physics and devices , 1992 .

[9] K. Cherenack,et al. The Effects of Mechanical Bending and Illumination on the Performance of Flexible IGZO TFTs , 2011, IEEE Transactions on Electron Devices.

[10] R. Hoffman. ZnO-channel thin-film transistors: Channel mobility , 2004 .

[11] H. Ohta,et al. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors , 2004, Nature.