Tuning InAs/GaAs quantum dot properties under Stranski-Krastanov growth mode for 1.3 μm applications
暂无分享,去创建一个
A. Fiore | L. Lazzarini | L. Nasi | R. Cingolani | R. Houdré | J. Carlin | A. Markus | J. Chen | M. Catalano | U. Oesterle | M. Ilegems | R. Stanley | E. Piscopiello | J. Ratajczak | J. Kątcki | Mt Todaro
[1] D. Deppe,et al. 1.3 μm room-temperature GaAs-based quantum-dot laser , 1998 .
[2] J. Tersoff. ENHANCED NUCLEATION AND ENRICHMENT OF STRAINED-ALLOY QUANTUM DOTS , 1998 .
[3] H. Benisty,et al. Method of source terms for dipole emission modification in modes of arbitrary planar structures , 1998 .
[4] A. Fiore,et al. High-efficiency light-emitting diodes at /spl ap/1.3 /spl mu/m using InAs-InGaAs quantum dots , 2000, IEEE Photonics Technology Letters.
[5] David T. D. Childs,et al. Effect of growth rate on the size, composition, and optical properties of InAs/GaAs quantum dots grown by molecular-beam epitaxy , 2000 .
[6] H. Sakaki,et al. Multidimensional quantum well laser and temperature dependence of its threshold current , 1982 .
[7] Nikolai N. Ledentsov,et al. 1.3 [micro sign]m GaAs-based laser using quantum dots obtained by activated spinodal decomposition , 1999 .
[8] Nikolai N. Ledentsov,et al. Quantum dot heterostructures , 1999 .
[9] Marc Ilegems,et al. Matrix effects on the structural and optical properties of InAs quantum dots , 2001 .
[10] M. Asada,et al. Gain and the threshold of three-dimensional quantum-box lasers , 1986 .
[11] D. Bimberg,et al. Temperature dependent optical properties of self-organized InAs/GaAs quantum dots , 1999 .
[12] Hansen,et al. Spectroscopy of quantum levels in charge-tunable InGaAs quantum dots. , 1994, Physical review letters.
[13] Diana L. Huffaker,et al. Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots , 1998 .
[14] N. Ledentsov,et al. Quantum dots formed by activated spinodal decomposition of InGa(Al)As alloy on InAs stressors , 2000 .
[15] Niclas Carlsson,et al. Mean-Field Theory of Quantum Dot Formation , 1997 .
[16] A. Stintz,et al. The influence of quantum-well composition on the performance of quantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structures , 2000, IEEE Journal of Quantum Electronics.
[17] S. Mikhrin,et al. Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate , 1999, IEEE Photonics Technology Letters.
[18] Mats-Erik Pistol,et al. Single quantum dots emit single photons at a time: Antibunching experiments , 2001 .
[19] J. Chyi,et al. Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures , 2000 .