IR Studies on VON, CIOI and CICS Defects in Ge-Doped Cz-Si

This paper reports experimental results on the production and annealing of oxygen-vacancy related (VOn, 1<n<5) and carbon-related (CiOi, CiOiI, and CiCs) defects in Ge-doped Czochralski-grown silicon (Cz-Si) materials containing carbon. The samples were irradiated by 2 MeV fast electrons and the behavior of radiation-produced defects is studied by means of infrared (IR) spectroscopy, monitoring the relevant bands in spectra. Regarding the VOn family, it was found that the presence of Ge affects the annealing temperature of VO defects as well as their fraction that is converted to VO2 defects. Both effects are discussed in relation with an impact of Ge on the concentration of self-interstitials that take part in the annealing of VO defects via two reaction paths VO + I → Oi and VO + Oi → VO2. Furthermore, two bands at 1037 and 1051 cm-1 are attributed to the VO5 defect, although three other bands at 762, 967 and 1005 cm-1 are believed to be associated with VnOm clusters containing carbon, most likely having a VOnCs structure. Regarding carbon-related complexes, it has been established that the annealing of the 862 cm-1 band belonging to the CiOi defect is accompanied by the emergence of the 1048 cm-1 band previously assigned to the CsO2i center. The evolution of the CiCs and the CiOiI bands is monitored and the identification of bands at 947, 967 and 1020 cm-1 making their appearance in IR spectra over the temperature range where CiCs and CiOiI defects are annealed out is discussed.

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