40-Gb/s high-power modulator driver IC for lightwave communication systems

A monolithic integrated modulator driver with a data decision function for high-speed optical fiber links is presented. The integrated circuit (IC) was manufactured in a 0.2-/spl mu/m gate length AlGaAs/InGaAs high electron mobility transistor technology with an f/sub T/ of 68 GHz. The modulator driver IC features differential configuration and operates up to 40 Gb/s with a clock phase margin of 210/spl deg/ and an output voltage swing of 2.9 V/sub p-p/ at each output. The maximum slew rate of the output signal is 200 mV/ps. The power dissipation of the circuit is 1.6 W using a single supply voltage of -5 V.

[1]  A. Thiede,et al.  High power modulator driver ICs up to 30 Gb/s with AlGaAs/GaAs HEMTs , 1997, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997.

[2]  Hans-Martin Rein,et al.  A versatile Si-bipolar driver circuit with high output voltage swing for external and direct laser modulation in 10 Gb/s optical-fiber links , 1994 .

[3]  M. Miyashita,et al.  An AlGaAs/InGaAs pseudomorphic HEMT modulator driver IC with low power dissipation for 10 Gb/s optical transmission systems , 1996, IMS 1996.

[4]  Tomoyoshi Kataoka,et al.  Limitations and challenges of single-carrier full 40-Gbit/s repeater system based on optical equalization and new circuit design , 1997, Proceedings of Optical Fiber Communication Conference (.

[5]  R. Takeyari,et al.  InP/InGaAs HBT ICs for 40 Gbit/s optical transmission systems , 1997, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997.

[6]  Y. Imai,et al.  40-Gbit/s ICs for future lightwave communications systems , 1996, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996.

[7]  D. Clawin,et al.  Multigigabit/second silicon decision circuit , 1985, 1985 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.

[8]  P. Desrousseaux,et al.  A InP DHBT technology for high bit-rate optical communications circuits , 1997, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997.

[9]  T. F. Meister,et al.  20 Gbit/s transimpedance preamplifier and modulator driver in SiGe bipolar technology , 1997 .