Nine-state resonant tunneling diode memory

The authors demonstrate an epitaxial series combination of eight pseudomorphic AlAs/In/sub 0.53/Ga/sub 0.47/As/InAs resonant tunneling diodes (RTDs) grown by molecular beam epitaxy on InP. This series RTD produces an eight-peak multiple negative differential resistance characteristic with a peak-to-valley current ratio (PVR) exceeding 2 per peak at a peak current density of approximately 6 kA/cm/sup 2/. Hysteresis in the current-voltage characteristic is reduced by uniformly Si doping the double-barrier resonant tunneling region at a density of 5*10/sup 16/ cm/sup -3/. Using this multiple-peak RTD in series with a field-effect transistor load, a nine-state multivalued memory circuit is demonstrated.<<ETX>>

[1]  Serge Luryi,et al.  Frequency limit of double‐barrier resonant‐tunneling oscillators , 1985 .

[2]  Masahiro Tsuchiya,et al.  Precise Control of Resonant Tunneling Current in AlAs/GaAs/AlAs Double Barrier Diodes with Atomically-Controlled Barrier Widths , 1986 .

[3]  R. C. Potter,et al.  Three and six logic states by the vertical integration of InAlAs/InGaAs resonant tunneling structures , 1988 .

[4]  S. Sen,et al.  New resonant-tunneling devices with multiple negative resistance regions and high room-temperature peak-to-valley ratio , 1988, IEEE Electron Device Letters.

[5]  R. C. Potter,et al.  Three-dimensional integration of resonant tunneling structures for signal processing and three-state logic , 1988 .

[6]  Clifton G. Fonstad,et al.  Pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes with peak‐to‐valley current ratios of 30 at room temperature , 1988 .

[7]  Byung-Gook Park,et al.  Elastic scattering centers in resonant tunneling diodes , 1988 .

[8]  T. Andersson,et al.  A multiple-state memory cell based on the resonant tunneling diode , 1988, IEEE Electron Device Letters.

[9]  James S. Harris,et al.  Variation of the spacer layer between two resonant tunneling diodes , 1989 .

[10]  S. Chu,et al.  Critical layer thickness in strained Ga1−xInxAs/InP quantum wells , 1989 .

[11]  Michael J. Paulus,et al.  Differential multiple-valued logic using resonant tunneling diodes , 1990, Proceedings of the Twentieth International Symposium on Multiple-Valued Logic.

[12]  Tai-Haur Kuo,et al.  A novel A/D converter using resonant tunneling diodes , 1991 .

[13]  On the intrinsic bistability in resonant tunneling structures: Observation of area and temperature dependence of hysteresis , 1991 .

[14]  H.J. Levy,et al.  Extracting discontinuities in early vision with networks of resonant tunneling diodes , 1992, [Proceedings] 1992 IEEE International Symposium on Circuits and Systems.

[15]  Alan Seabaugh,et al.  Vertical integration of structured resonant tunneling diodes on InP for multi-valued memory applications , 1992, LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels.

[16]  Lutz J. Micheel.  Heterojunction bipolar technology for emitter-coupled multiple-valued logic in gigahertz adders and multipliers , 1992, [1992] Proceedings The Twenty-Second International Symposium on Multiple-Valued Logic.

[17]  Hung Chang Lin,et al.  Multivalued SRAM cell using resonant tunneling diodes , 1992 .

[18]  H.J. Levy,et al.  A feedforward artificial neural network based on quantum effect vector-matrix multipliers , 1993, IEEE Trans. Neural Networks.

[19]  稲井 基彦.  Quantum effect devices , 1994 .