Lateral profiling of oxide charge and interface traps near MOSFET junctions
暂无分享,去创建一个
[1] S. Ogura,et al. Design and characteristics of the lightly doped drain-source (LDD) insulated gate field-effect transistor , 1980 .
[2] D. McCarthy,et al. Lateral distribution of hot-carrier-induced interface traps in MOSFETs , 1988 .
[3] A. Balasinski,et al. Hot-carrier effects on interface-trap capture cross sections in MOSFETs as studied by charge pumping , 1992, IEEE Electron Device Letters.
[4] A. Asenov,et al. Hot-carrier-induced deep-level defects from gated-diode measurements on MOSFETs , 1990, IEEE Electron Device Letters.
[5] G. Groeseneken,et al. Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation , 1989 .
[6] G. Groeseneken,et al. A reliable approach to charge-pumping measurements in MOS transistors , 1984, IEEE Transactions on Electron Devices.
[7] T. Ma,et al. Channel hot-carrier induced oxide charge trapping in NMOSFET'S , 1991, International Electron Devices Meeting 1991 [Technical Digest].
[8]
A. Boudou,et al.
Interface state creation and charge trapping in the medium-to-high gate voltage range (V/sub d//2>or=V/sub g/
[9] T. Ma,et al. Effects of electron‐beam radiation on MOS structures as influenced by the silicon dopant , 1977 .
[10] T. Ma,et al. Determination of trapped oxide charge in flash EPROMs and MOSFETs with thin oxides , 1992, IEEE Electron Device Letters.
[11] W. Chen,et al. A new technique for measuring lateral distribution of oxide charge and interface traps near MOSFET junctions , 1991, IEEE Electron Device Letters.
[12] J. Brugler,et al. Charge pumping in MOS devices , 1969 .