Novel MOBILE gates with low-power, relaxed parameter sensitivity, and increased driving capability

Negative-differential resistance devices, i.e. Resonant Tunneling Diodes (RTD) have recently enabled a substantial improvement in low-power memories and high-speed logic gates. For logic circuits two series connected RTDs are monolithically integrated with parallel HFET input branches building the monostable-bistable transition logic element (MOBILE). In this paper we report on drastic improvements of the MOBILE concept addressing the major restrictions: trade-off between output driving capability, number of inputs and additional current for the parallel input branches, critical design criteria for two independent technologies: HFET (threshold voltage, lateral current density) and RTD (device area, vertical current density).

[1]  J.P.A. van der Wagt,et al.  RTD/HFET low standby power SRAM gain cell , 1998, IEEE Electron Device Letters.

[2]  Pinaki Mazumder,et al.  Digital circuit applications of resonant tunneling devices , 1998, Proc. IEEE.

[3]  Peter Glösekötter,et al.  Resonant tunneling transistors for threshold logic circuit applications , 1999, Proceedings Ninth Great Lakes Symposium on VLSI.

[4]  Gary H. Bernstein,et al.  12 GHz clocked operation of ultralow power interband resonant tunneling diode pipelined logic gates , 1997, IEEE J. Solid State Circuits.

[5]  C. Pacha,et al.  InP-based HFETs and RTDs for high speed digital circuitry , 1998, 1998 URSI International Symposium on Signals, Systems, and Electronics. Conference Proceedings (Cat. No.98EX167).

[6]  K. Maezawa,et al.  InP-based high-performance monostable-bistable transition logic elements (MOBILEs) using integrated multiple-input resonant-tunneling devices , 1996, IEEE Electron Device Letters.