Full Ka-band High Performance InP MMIC LNA Module

A 0.1-mum InP HEMT Ka-band LNA with high and flat gain, very low noise figure and low VSWR has been developed. Across the entire Ka-band, of 26 GHz to 40 GHz, the MMIC LNA demonstrated associated gain of 21.9 plusmn 0.9 dB and an average noise figure of 1.5 dB with a minimum of 1.3 dB at 34 GHz. The LNA chip was cryogenically cooled to 12 K where it exhibited an associated gain of 23.0 plusmn 1.1 dB and an average noise temperature of 15.5 K, i.e. 0.23-dB noise figure. Two LNA chips were cascaded and assembled into a module. At room temperature, the module achieved an associated gain of 37.6 dB plusmn 1.8 dB and an average noise figure of 1.3 dB. At 15 K, the average noise temperature was improved to 11.4 K with 41.0 plusmn 2.4 dB associated gain

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