SIMULATION OF A FLOATING-GATE EPROM CELL

The ever increasing chip density makes the influence of three-dimensional effects in VLSI devices more and more sensible. In this paper, a prototypal three-dimensional device simulator is presented, which allows for accurate modelling of such effects. It adopts a prismaticelement discretization technique, that makes the mesh generation ebsier without introducing too severe geometrical limitations. Among the peculiar features of the program is the capability of managing appropriate boundary condition for floating gates (Le., charge boundary condition). As a test application, the simulation of a floating-gate EPROM cell is described and compared with a two-dimensional simulation. Finally, some details abont the implementation of the code on a CRAY supercomputer are given, discussing the program performance in a vector environment.