论文信息 - SiC BGJFET inverter for high temperature/power applications

SiC BGJFET inverter for high temperature/power applications

SiC buried gate JFET (BGJFET) inverters were designed, implemented, and tested for high-temperature and high-power applications. The main purpose of this study was to investigate the thermal stability of the SiC BGJFETs in a circuit operation as well as to observe the effects of temperature on the circuit performance. The work is subdivided into two major sections: modeling of SiC BGJFETs and simulation of various inverter configurations; and experimental results and observations.

L.P. Sadwick | R.J. Hwu | L.V. Rozario | D.B. King

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