论文信息 - Electronic properties of Pb1−xHgxSSi heterojunctions - 字舞流文

Electronic properties of Pb1−xHgxSSi heterojunctions

K. Chopra | N. Sharma

[1] H. Grubin. The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[2] H. K. Sehgal,et al. Optical and electrical properties of electroless- deposited Pb1−xHgxS films , 1979 .

[3] H. K. Sehgal,et al. The structural properties of Pb1−xHgxS films of variable optical gap , 1977 .

[4] H. K. Sehgal,et al. Solution growth of variable gap Pb1−xHgxS films for infrared detectors , 1976 .

[5] Saburo Watanabe,et al. CdS ‐ PbS Heterojunctions , 1969 .

[6] A. R. Riben,et al. Electrical Transport in nGe-pGaAs Heterojunctions† , 1966 .

[7] John L. Davis,et al. Ge‐Epitaxial‐PbS Heterojunctions , 1966 .

[8] P. J. Holmes,et al. The Electrochemistry of Semiconductors , 1962 .