A 1T/1C Ferrodectric RAM Using A Double-level Metal Process For Highly Scalable Nonvolatile Memory

A double-level metal, one-poly, 1T/lC 64k ferroelectric RAM has been successfully fabricated with 1.2~ conventional CMOS technology. By realizing aluminum bit line, aluminum plate line in the doublelevel metal process without degrading Pt/PZT/Pt ferroelectric capacitor and by adopting lT/lC cell archtecture, lOOns data access time was obtained at Vcc=S.OV which is faster by 40% than the commercialized 2T/2C FRAM with a single-level metal. A proper annealing processes was proved to be the key for the recovery of the ferroelectric capacitor degradation caused by the double-level metal integration process.