论文信息 - Molecular beam epitaxial growth of strained layers on graded for Pt silicide Schottky diodes

Molecular beam epitaxial growth of strained layers on graded for Pt silicide Schottky diodes

Low temperature growth of a high quality strained film on graded is demonstrated using MBE. In situ monitoring of reflection high electron energy diffraction (RHEED) patterns and intensity oscillations during different stages of the growth has shown two-dimensional pseudomorphic growth. The layers have been further characterized by x-ray photoelectron spectroscopy (XPS), x-ray diffraction (XRD), secondary ion mass spectroscopy (SIMS) and atomic force microscopy (AFM). The Schottky barrier height of platinum-silicide (PtSi) on p-type has been found to vary between 0.19-0.57 eV in the temperature range 100-300 K. At 300 K, the ideality factor has been found to be 2.0 and 1.32 for PtSi/ and PtSi/ diodes, respectively.

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