Electron Tunneling through Asymmetric Films of Thermally Grown Al2O3

The current through Al‐Al2O3‐metal structures was studied in detail and a description based upon electron tunneling is presented. It is shown that: the trapezoidal energy barrier model of Simmons adequately accounts for the details of the current‐voltage characteristic over 9 current decades; there is a built‐in voltage across a thermally grown oxide film of 0.92 V, in agreement with Mott's theory; the vacuum work function of the counterelectrode determines the barrier height at the oxide‐counterelectrode interface; and the electron affinity of Al2O3 is 1.58 eV.

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