Modeling and Simulation of Silicon Carbide ( SiC ) Based Bipolar Junction Transistor

Silicon Carbide (SiC) is a promising material for high voltage and high temperature applications due to their low conduction losses and fast switching capability. This paper focuses on the simulation of static and switching characteristics of SiC Bipolar Junction Transistor (BJT developed by TranSiC) rated at 600V and 6A at different temperatures. SiC BJT is modeled in MATLAB using EbersMoll equations. The Ebers-Moll parameters taken for modeling SiC are: parasitic capacitances (CBC and CBE), the forward current gain βF , the early voltage and the saturation current (Is). Comparison was made between the SiC BJT and a 1200 V Si insulated gate bipolar transistor (IGBT). The simulation results are verified with experimental data. It is found that SiC BJT has much smaller conduction and switching losses than the Si IGBT.

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