Anatomy of Ag/Hafnia‐Based Selectors with 1010 Nonlinearity

A novel Ag/oxide-based threshold switching device with attractive features including ≈1010 nonlinearity is developed. High-resolution transmission electron microscopic analysis of the nanoscale crosspoint device suggests that elongation of an Ag nanoparticle under voltage bias followed by spontaneous reformation of a more spherical shape after power off is responsible for the observed threshold switching.

[1]  Allyson Buttram,et al.  ELECT , 2019, Grotesque Tenderness.

[2]  J. Yang,et al.  Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing. , 2017, Nature materials.

[3]  Hyunsang Hwang,et al.  Steep Slope Field-Effect Transistors With Ag/TiO2-Based Threshold Switching Device , 2016, IEEE Electron Device Letters.

[4]  H. Barnaby,et al.  Volatile and Non-Volatile Switching in Cu-SiO2 Programmable Metallization Cells , 2016, IEEE Electron Device Letters.

[5]  R. Stanley Williams,et al.  An accurate locally active memristor model for S-type negative differential resistance in NbOx , 2016 .

[6]  Kate J. Norris,et al.  Trilayer Tunnel Selectors for Memristor Memory Cells , 2015, Advanced materials.

[7]  Qing Luo,et al.  Cu BEOL compatible selector with high selectivity (>107), extremely low off-current (∼pA) and high endurance (>1010) , 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

[8]  Hyunsang Hwang,et al.  Bidirectional threshold switching in engineered multilayer (Cu2O/Ag:Cu2O/Cu2O) stack for cross-point selector application , 2015 .

[9]  Pritish Narayanan,et al.  Exploring the Design Space for Crossbar Arrays Built With Mixed-Ionic-Electronic-Conduction (MIEC) Access Devices , 2015, IEEE Journal of the Electron Devices Society.

[10]  S. Jo,et al.  Cross-Point Resistive RAM Based on Field-Assisted Superlinear Threshold Selector , 2015, IEEE Transactions on Electron Devices.

[11]  Hyunsang Hwang,et al.  Threshold Selector With High Selectivity and Steep Slope for Cross-Point Memory Array , 2015, IEEE Electron Device Letters.

[12]  A. Strachan,et al.  Stability and migration of small copper clusters in amorphous dielectrics , 2015, 1502.07031.

[13]  Rainer Waser,et al.  Volatile resistance states in electrochemical metallization cells enabling non-destructive readout of complementary resistive switches , 2014, Nanotechnology.

[14]  Sarma Vrudhula,et al.  Incremental resistance programming of programmable metallization cells for use as electronic synapses , 2014 .

[15]  Qi Liu,et al.  Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology , 2014 .

[16]  Doo Seok Jeong,et al.  A Review of Three‐Dimensional Resistive Switching Cross‐Bar Array Memories from the Integration and Materials Property Points of View , 2014 .

[17]  Wei D. Lu,et al.  Electrochemical dynamics of nanoscale metallic inclusions in dielectrics , 2014, Nature Communications.

[18]  Jiantao Zhou,et al.  Crossbar RRAM Arrays: Selector Device Requirements During Write Operation , 2014, IEEE Transactions on Electron Devices.

[19]  X. Bai,et al.  Bipolar Electrochemical Mechanism for Mass Transfer in Nanoionic Resistive Memories , 2014, Advanced materials.

[20]  Rainer Waser,et al.  Nanobattery Effect in RRAMs—Implications on Device Stability and Endurance , 2014, IEEE Electron Device Letters.

[21]  Hongyu Yu,et al.  The transport properties of oxygen vacancy-related polaron-like bound state in HfOx , 2013, Scientific Reports.

[22]  Hyunsang Hwang,et al.  BEOL compatible (300°C) TiN/TiOx/Ta/TiN 3D nanoscale (∼10nm) IMT selector , 2013, 2013 IEEE International Electron Devices Meeting.

[23]  M. R. Uddin,et al.  A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory , 2013, Nature Communications.

[24]  Cheol Seong Hwang,et al.  Short-term memory of TiO2-based electrochemical capacitors: empirical analysis with adoption of a sliding threshold , 2013, Nanotechnology.

[25]  Jong-Ho Lee,et al.  32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory , 2013 .

[26]  Jan van den Hurk,et al.  Nanobatteries in redox-based resistive switches require extension of memristor theory , 2013, Nature Communications.

[27]  Shimeng Yu,et al.  HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture. , 2013, ACS nano.

[28]  Yukio Hayakawa,et al.  An 8 Mb Multi-Layered Cross-Point ReRAM Macro With 443 MB/s Write Throughput , 2012, IEEE Journal of Solid-State Circuits.

[29]  J Joshua Yang,et al.  Memristive devices for computing. , 2013, Nature nanotechnology.

[30]  Ilia Valov,et al.  Nucleation and growth phenomena in nanosized electrochemical systems for resistive switching memories , 2013, Journal of Solid State Electrochemistry.

[31]  H. Hwang,et al.  Ultrathin (<10nm) Nb2O5/NbO2 hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications , 2012, 2012 Symposium on VLSI Technology (VLSIT).

[32]  Zheng Fang,et al.  Transport properties of HfO_ {2- x} based resistive-switching memories , 2012 .

[33]  Matthias Wuttig,et al.  Nanosecond threshold switching of GeTe6 cells and their potential as selector devices , 2012 .

[34]  Yuchao Yang,et al.  Observation of conducting filament growth in nanoscale resistive memories , 2012, Nature Communications.

[35]  J. Yang,et al.  Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High‐Performance Memristor , 2011, Advanced materials.

[36]  Byung Joon Choi,et al.  Purely Electronic Switching with High Uniformity, Resistance Tunability, and Good Retention in Pt‐Dispersed SiO2 Thin Films for ReRAM , 2011, Advanced materials.

[37]  H. Hwang,et al.  Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications , 2011, IEEE Electron Device Letters.

[38]  T. Hasegawa,et al.  Short-term plasticity and long-term potentiation mimicked in single inorganic synapses. , 2011, Nature materials.

[39]  I-Wei Chen,et al.  A size-dependent nanoscale metal-insulator transition in random materials. , 2011, Nature nanotechnology.

[40]  Shimeng Yu,et al.  Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM) , 2011, IEEE Transactions on Electron Devices.

[41]  Marcelo Rozenberg.  Resistive switching , 2011, Scholarpedia.

[42]  Frederick T. Chen,et al.  Formation and instability of silver nanofilament in Ag-based programmable metallization cells. , 2010, ACS nano.

[43]  Jae Hyuck Jang,et al.  Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. , 2010, Nature nanotechnology.

[44]  Dmitri B Strukov,et al.  Four-dimensional address topology for circuits with stacked multilayer crossbar arrays , 2009, Proceedings of the National Academy of Sciences.

[45]  R. Dittmann,et al.  Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges , 2009, Advanced materials.

[46]  F. Zeng,et al.  Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application. , 2009, Nano letters.

[47]  R. Waser,et al.  Nanoionics-based resistive switching memories. , 2007, Nature materials.

[48]  Neil Genzlinger.  A. and Q , 2006 .

[49]  K. Terabe,et al.  Quantized conductance atomic switch , 2005, Nature.

[50]  B. Günther,et al.  Secondary recrystallization effects in nanostructured elemental metals , 1992 .