Strained SiGe and Si FinFETs for high performance logic with SiGe/Si stack on SOI

In this work, we report high performance (I<inf>on</inf> ∼1 mA/µm at Ioff 100nA/µm @ 1V Vcc) short channel p-type SiGe/Si FinFETs combining high mobility, low T<inf>inv</inf> (scaled High-k w/o Si cap), low R<inf>sd</inf>, and process-induced strain. A dual channel scheme for high mobility CMOS FinFETs is demonstrated.

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