22 kV, 1 cm2, 4H-SiC n-IGBTs with improved conductivity modulation
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S. Ryu | J. Richmond | J. Palmour | M. O'loughlin | S. Allen | L. Cheng | V. Pala | E. Brunt | A. Burk | C. Scozzie | C. Capell | C. Jonas | K. Lam
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