Epitaxial n/sup +/ layer GaAs mesa-finger interdigital surface photodetectors
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R. Darling | B. Nabet | S. Ray | J. Samaras | E. L. Carter
[1] R. Darling. Analysis of microwave characteristics of photoconductive IC structures , 1987 .
[2] O. Wada,et al. GaAs optoelectronic integrated receiver with high-output fast-response characteristics , 1987, IEEE Electron Device Letters.
[3] M. Ito,et al. Low dark current GaAs metal-semiconductor-metal (MSM) photodiodes using WSi x contacts , 1986 .
[4] M. Ito,et al. A monolithic four-channel photoreceiver integrated on a GaAs substrate using metal-semiconductor-metal photodiodes and FET's , 1985, IEEE Electron Device Letters.
[5] M. Ito,et al. Monolithic integration of a metal—semiconductor—metal photodiode and a GaAs preamplifier , 1984, IEEE Electron Device Letters.
[6] D. Auston. CHAPTER 4 – Picosecond Photoconductors: Physical Properties and Applications , 1984 .
[7] T. Sugeta,et al. WP-B2 high-gain metal—Semiconductor—Metal photodetectors for high-speed optoelectronic circuits , 1979, IEEE Transactions on Electron Devices.