论文信息 - A Design of CMOS RF T/R Switch

A Design of CMOS RF T/R Switch

This paper describes the design and fabrication of the transmit/receive (T/R) switch for frequency lower than 1GHz application. To increase the isolation, two stage switch is designed. And to optimize the performance of isolation and insertion loss, the effects of gate series resistances (GSR) on insertion loss and switching time are analyzed for the first time. The fabricated chips were tested and the measured isolation from DC (direct current) to 1GHz exhibits 55dB and insertion loss lower than 2.1dB

Tao Yang | Lei Han | Bo Zhang

[1] K. O. Kenneth,et al. Single-pole double-throw CMOS switches for 900-MHz and 2.4-GHz applications on p-silicon substrates , 2004, IEEE J. Solid State Circuits.

[2] Olga Boric-Lubecke,et al. NMOS SPDT Switch MMIC with >44 dB Isolation and 30 dBm IIP3 for Applications within GSM and UMTS bands , 2001 .

[3] S. Lucyszyn,et al. RFIC and MMIC Design and Technology , 2001 .