论文信息 - Laser annealing of the Si layers in Si/SiO2 multiple quantum wells

Laser annealing of the Si layers in Si/SiO2 multiple quantum wells

Abstract The transition of amorphous to crystalline silicon in nanometer-sized structures was investigated by means of Raman spectroscopy. The phase transition was induced by illumination with monochromatic light. The crystallization and accompanying processes were studied for silicon layers embedded in silicon oxide matrix and forming a multiple quantum well (MQW) structure. Thickness of the layers varied in 3–60 nm range for various MQW. The results could be explained considering dispersion in light absorption of amorphous and crystalline films for the employed range of radiation wavelengths. The electrical and photovoltaic properties of the crystallized structures were characterized in view of their capability for lateral carrier transport.

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