Advanced Power Rectifier Concepts
暂无分享,去创建一个
[1] B.J. Baliga,et al. Analysis of a high-voltage merged p-i-n/Schottky (MPS) rectifier , 1987, IEEE Electron Device Letters.
[2] B. J. Baliga,et al. The pinch rectifier: A low-forward-drop high-speed power diode , 1984, IEEE Electron Device Letters.
[3] F. Sawitzki,et al. Improved recovery of fast power diodes with self-adjusting p emitter efficiency , 1989, IEEE Electron Device Letters.
[4] B. Jayant Baliga,et al. Fundamentals of Power Semiconductor Devices , 2008 .
[5] A. Magna,et al. Silicon carbide pinch rectifiers using a dual-metal Ti-Ni/sub 2/Si Schottky barrier , 2003 .
[6] B. J. Baliga. Silicon Carbide Power Devices , 2005 .
[7] Bantval J. Baliga,et al. Power semiconductor devices for variable-frequency drives , 1994, Proc. IEEE.
[8] T. Chow,et al. A 4H-SiC trench MOS barrier Schottky (TMBS) rectifier , 1999, 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312).
[9] E. H. Rhoderick,et al. Metal–Semiconductor Contacts , 1979 .
[10] M. Melloch,et al. A dual-metal-trench Schottky pinch-rectifier in 4H-SiC , 1998, IEEE Electron Device Letters.
[11] S. Ghandhi. Semiconductor power devices , 1977 .
[12] N. R. Howard,et al. P+IN+ silicon diodes at high forward current densities , 1965 .
[13] H. Benda,et al. Reverse recovery processes in silicon power rectifiers , 1967 .
[14] Chuan Yi Tang,et al. A 2.|E|-Bit Distributed Algorithm for the Directed Euler Trail Problem , 1993, Inf. Process. Lett..
[15] R. Blank. What Goes Up Must Come Down? Explaining Recent Changes in Public Assistance Caseloads , 1999 .
[16] R. Held,et al. SiC Merged p-n/Schottky Rectifiers for High Voltage Applications , 1997 .
[17] B. J. Baliga,et al. Evolution of MOS-bipolar power semiconductor technology , 1988, Proc. IEEE.
[18] Hossin Hosseinian,et al. Power Electronics , 2020, 2020 27th International Conference on Mixed Design of Integrated Circuits and System (MIXDES).
[19] B. Jayant Baliga,et al. High Voltage Silicon Carbide Devices , 1998 .
[20] Takashi Shinohe,et al. Reverse Characteristics of a 4H-SiC Schottky Barrier Diode , 2002 .
[21] A. Agarwal,et al. 12-kV p-Channel IGBTs With Low On-Resistance in 4H-SiC , 2008, IEEE Electron Device Letters.
[22] S. M. Sze,et al. Physics of semiconductor devices , 1969 .
[23] B. J. Baliga,et al. Modern Power Devices , 1987 .
[24] M. Naito,et al. High-speed low-loss p-n diode having a channel structure , 1984, IEEE Transactions on Electron Devices.
[25] Hans A. Bethe,et al. Theory of the Boundary Layer of Crystal Rectifiers , 1991 .
[26] R. N. Hall,et al. Power Rectifiers and Transistors , 1952, Proceedings of the IRE.