论文信息 - Three-dimensional InP-DHBT on SiGe-BiCMOS integration by means of Benzocyclobutene based wafer bonding for MM-wave circuits - 字舞流文

Three-dimensional InP-DHBT on SiGe-BiCMOS integration by means of Benzocyclobutene based wafer bonding for MM-wave circuits

B. Tillack | N. Weimann | W. Heinrich | V. Krozer | M. Lisker | F. Schmuckle | A. Thies | W. John | O. Krüger | S. Sinha | I. Ostermay | T. Kraemer