Measuring the concentration and energy distribution of interface states using a non-contact corona oxide semiconductor method

The electronic states distribution at the Si-SiO2 interface was measured by combining contactless corona charge-voltage measurement and low-frequency capacitance voltage method. Using device equivalent circuit modeling, we were able to obtain the silicon-insulator interface states energy distribution across the whole Si band gap with a single measurement. The measured distribution has the well known u-shaped curve, with a minimum around mid gap of 2 × 1010 cm−2 eV−1 and maximum values close to the band edges reaching 6 × 1013 cm−2 eV−1. Two distinct peaks were observed at 0.21 eV and 0.88 eV above the valence band maximum which correspond to the Si (100) Pb0 centers.

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