Nitride-based semiconductors for blue and green light-emitting devices

[1]  Masayuki Ishikawa,et al.  Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates , 1996 .

[2]  Shuji Nakamura,et al.  Ridge‐geometry InGaN multi‐quantum‐well‐structure laser diodes , 1996 .

[3]  H. Amano,et al.  Shortest wavelength semiconductor laser diode , 1996 .

[4]  Shuji Nakamura,et al.  Characteristics of InGaN multi‐quantum‐well‐structure laser diodes , 1996 .

[5]  Northrup,et al.  Atomic arrangement at the AlN/SiC interface. , 1996, Physical review. B, Condensed matter.

[6]  R. Molnar,et al.  Optically pumped GaN/Al0.1Ga0.9N double‐heterostructure ultraviolet laser , 1996 .

[7]  D. Bour,et al.  Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor deposition , 1996 .

[8]  Shuji Nakamura,et al.  InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets , 1996 .

[9]  D. Neumayer,et al.  Growth of Group III Nitrides. A Review of Precursors and Techniques , 1996 .

[10]  Takashi Mukai,et al.  Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes , 1995 .

[11]  Hadis Morkoç,et al.  Emerging gallium nitride based devices , 1995, Proc. IEEE.

[12]  Vladimir Dmitriev,et al.  Spontaneous and stimulated emission from photopumped GaN grown on SiC , 1995 .

[13]  Fernando Ponce,et al.  Microstructure of GaN epitaxy on SiC using AlN buffer layers , 1995 .

[14]  Isamu Akasaki,et al.  Surface‐mode stimulated emission from optically pumped GaInN at room temperature , 1995 .

[15]  S. Nakamura,et al.  High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures , 1995 .

[16]  Fernando Ponce,et al.  High dislocation densities in high efficiency GaN‐based light‐emitting diodes , 1995 .

[17]  Takashi Mukai,et al.  High‐brightness InGaN/AlGaN double‐heterostructure blue‐green‐light‐emitting diodes , 1994 .

[18]  D. Welch,et al.  Crystalline structure of AlGaN epitaxy on sapphire using AlN buffer layers , 1994 .

[19]  H. Morkoç,et al.  Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies , 1994 .

[20]  Thomas George,et al.  Vertical–cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature , 1994 .

[21]  Isamu Akasaki,et al.  Widegap Column‐ III Nitride Semiconductors for UV/Blue Light Emitting Devices , 1994 .

[22]  S. Nakamura,et al.  Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes , 1994 .

[23]  Isamu Akasaki,et al.  Room‐temperature violet stimulated emission from optically pumped AlGaN/GaInN double heterostructure , 1994 .

[24]  Takashi Mukai,et al.  InxGa(1−x)N/InyGa(1−y)N superlattices grown on GaN films , 1993 .

[25]  Takashi Mukai,et al.  High-Quality InGaN Films Grown on GaN Films , 1992 .

[26]  M. Craford.  LEDs challenge the incandescents , 1992, IEEE Circuits and Devices Magazine.

[27]  S. Nakamura,et al.  Thermal Annealing Effects on P-Type Mg-Doped GaN Films , 1992 .

[28]  Shuji Nakamura,et al.  GaN Growth Using GaN Buffer Layer , 1991 .

[29]  R. Fletcher,et al.  High performance AlGaInP visible light‐emitting diodes , 1990 .

[30]  Isamu Akasaki,et al.  Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer , 1990 .

[31]  H. Amano,et al.  P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI) , 1989 .

[32]  H. M. Manasevit,et al.  The Use of Metalorganics in the Preparation of Semiconductor Materials VIII . Feasibility Studies of the Growth of Group III ‐Group V Compounds of Boron by MOCVD , 1989 .

[33]  Takeshi Kuboyama,et al.  Properties of Ga1-xInxN Films Prepared by MOVPE , 1989 .

[34]  G. R. Antell,et al.  Passivation of zinc acceptors in InP by atomic hydrogen coming from arsine during metalorganic vapor phase epitaxy , 1988 .

[35]  R. Dupuis,et al.  An introduction to the development of the semiconductor laser , 1987 .

[36]  H. Amano,et al.  Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer , 1986 .

[37]  Johnson,et al.  Hydrogen passivation of shallow-acceptor impurities in p-type GaAs. , 1986, Physical review. B, Condensed matter.

[38]  Wei Wang,et al.  Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100) , 1984 .

[39]  Sadafumi Yoshida,et al.  Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN‐coated sapphire substrates , 1983 .

[40]  L. Esaki,et al.  Molecular beam epitaxy of AlSb , 1982 .

[41]  A. Itoh,et al.  Epitaxial growth of aluminum nitride films on sapphire by reactive evaporation , 1975 .

[42]  T. Matsumoto,et al.  Temperature Dependence of Photoluminescence from GaN , 1974 .

[43]  H. M. Manasevit,et al.  The Use of Metalorganics in the Preparation of Semiconductor Materials IV . The Nitrides of Aluminum and Gallium , 1971 .

[44]  R. F. Leheny,et al.  Stimulated Emission and Laser Action in Gallium Nitride , 1971 .

[45]  J. J. Tietjen,et al.  THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN , 1969 .

[46]  N. Holonyak,et al.  COHERENT (VISIBLE) LIGHT EMISSION FROM Ga(As1−xPx) JUNCTIONS , 1962 .

[47]  David P. Bour,et al.  Spatial distribution of the luminescence in GaN thin films , 1996 .

[48]  S. Nakamura,et al.  InGaN-Based Multi-Quantum-Well-Structure Laser Diodes , 1996 .

[49]  S. Nakamura.  Characteristics of InGaN Multiquantum-Well-Structure Laser Diodes , 1996 .

[50]  S. Miotkowska,et al.  High pressure vapor growth of GaN , 1982 .

[51]  Jacques I. Pankove,et al.  GaN electroluminescent diodes , 1971 .

[52]  H. Lockwood,et al.  Recombination Radiation in GaAs , 1963 .