1/f noise in proton-irradiated SiGe HBTs

Investigates the impact of proton irradiation on the 1/f noise in ultra-high-voltage chemical-vapor deposition SiGe heterojunction bipolar transistors. The relative degradation of 1/f noise shows a strong dependence on device geometry. Both the geometry dependence and the bias dependence of 1/f noise change significantly after exposure to 2/spl times/10/sup 13/ p/cm/sup 2/ protons. An expression describing the 1/f noise is derived and used to explain the experimental observations.

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