Optical evaluation of an AlAs/AlGaAs visible Bragg reflector grown by chemical beam epitaxy

A 21 layer AlAs/Al0.4Ga0.6As multilayer structure, designed as a Bragg reflector centered at 670 nm, has been grown by chemical beam epitaxy. The growth was monitored in real time by dynamic optical reflectivity (DOR) using a 670 nm semiconductor diode laser. The resultant DOR trace was compared to a computer simulation for the growth structure and good agreement is obtained using layer thicknesses measured by transmission electron microscopy. The wavelength dependent reflectivity of the Bragg reflector was measured using a grating spectrometer and good agreement is obtained to a computer simulation once the dispersive complex refractive index is taken into account.

[1]  H A Macleod,et al.  Monitoring of optical coatings. , 1981, Applied optics.

[2]  P. D. Dapkus,et al.  In situ laser reflectometry applied to the growth of Al/sub x/Ga/sub 1-x/As Bragg reflectors by metalorganic chemical vapour deposition , 1991 .

[3]  T. Drummond,et al.  Single crystal, epitaxial multilayers of AlAs, GaAs, and AlxGa1−xAs for use as optical interferometric elements , 1986 .

[4]  Hiromoto Susawa,et al.  GaAs/GaAlAs surface emitting IR LED with Bragg reflector grown by MOCVD , 1991 .

[5]  R. Burnham,et al.  High reflectivity GaAs‐AlGaAs mirrors fabricated by metalorganic chemical vapor deposition , 1984 .

[6]  Piet Demeester,et al.  High‐reflectivity GaAs‐AlGaAs mirrors: Sensitivity analysis with respect to epitaxial growth parameters , 1987 .

[7]  Paul L. Gourley,et al.  Visible, room‐temperature, surface‐emitting laser using an epitaxial Fabry–Perot resonator with AlGaAs/AlAs quarter‐wave high reflectors and AlGaAs/GaAs multiple quantum wells , 1987 .

[8]  Rajaram Bhat,et al.  Optical properties of AlxGa1−x As , 1986 .

[10]  J. A. Lott,et al.  Visible (657 nm) InGaP/InAlGaP strained quantum well vertical‐cavity surface‐emitting laser , 1992 .

[11]  K. H. Jolliffee.  Optical properties of thin solid films , 1954 .

[12]  M Ilegems,et al.  Multilayer GaAs-Al(0.3)Ga(0.7)As dielectric quarter wave stacks grown by molecular beam epitaxy. , 1975, Applied optics.

[13]  Peter Goodhew,et al.  Monitoring real-time CBE growth of GaAs and AlGaAs using dynamic optical reflectivity , 1992 .

[14]  Martin A. Afromowitz,et al.  Refractive index of Ga1−xAlxAs , 1974 .