论文信息 - The microscopic nature of donor-type SiSiO2 interface states

The microscopic nature of donor-type SiSiO2 interface states

Abstract Donor-type interface states, generated by vacuum ultraviolet irradiation have been studied. They anneal at room temperature but only when in a neutral state. This anneal is accompanied by the release of atomic hydrogen. It is proposed that the states are formed by H loosely bonded to sites in the SiO 2 network at or near the interface. Anneal would take place by removal of H. Capturing a hole would strengthen the bond between H and the network site.

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