Electrical Characterization of InAs/(GaIn)Sb Infrared Superlattice Photodiodes for the 8 to 12νm Range
暂无分享,去创建一个
[1] Christoph H. Grein,et al. Reply to ‘‘Comment on ‘Temperature limits on infrared detectivities of InAs/InxGa1−xSb superlattices and bulk Hg1−xCdxTe’ ’’ [J. Appl. Phys. 80, 2542 (1996)] , 1995 .
[2] Darryl L. Smith,et al. Proposal for strained type II superlattice infrared detectors , 1987 .
[3] Arthur C. Gossard,et al. Electrical and optical properties of infrared photodiodes using the InAs/Ga1−xInxSb superlattice in heterojunctions with GaSb , 1996 .
[4] Martin Walther,et al. High performance InAs/Ga1-xInxSb superlattice infrared photodiodes , 1997 .
[5] Martin Walther,et al. InAs/Ga1-xInxSb infrared superlattice diodes: correlation between surface morphology and electrical performance , 1999, Optics & Photonics.
[6] Martin Walther,et al. unneling effects in InAs/GaInSb superlattice infrared photodiodes , 1997 .
[7] Jerry R. Meyer,et al. AUGER LIFETIME ENHANCEMENT IN INAS-GA1-XINXSB SUPERLATTICES , 1994 .
[8] Frank Fuchs,et al. Magneto-optics of InAs/Ga1−xInxSb infrared superlattice diodes , 1998 .
[9] Martin Walther,et al. InAs/Ga1-xInxSb infrared superlattice photodiodes for infrared detection , 1998, Photonics West.