Extraction of SPICE BJT model parameters in BIPOLE3 using optimization methods

We present a method for SPICE model parameter extraction for a bipolar transistor in the active and quasisaturation modes. It uses the capabilities of the BIPOLE3 simulator to enhance the optimization procedure. Comparisons are made between the Gummel-Poon, the VBIC95, and the SGS-Thomson Microelectronics SPICE model results for I/sub C/(V/sub BE/), I/sub B/(V/sub BE/), /spl beta/(I/sub C/), f/sub T/(I/sub C/), and I/sub C/(V/sub CE/) characteristics.

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