论文信息 - Highly Tensile Strained Silicon Carbon Phosphorus Alloys Epitaxially Grown into Recessed Source Drain Areas of NMOS devices

Highly Tensile Strained Silicon Carbon Phosphorus Alloys Epitaxially Grown into Recessed Source Drain Areas of NMOS devices

Growth rates up to 82 nm/min (at 550degC) led to films incorporating up to 3.6% substitutional carbon according to Vegard's law; (2.8% after (Kelires, 1998)) and an alpha/epi growth rate ratio of 1. The films were fully strained with perpendicular lattice constants of down to 5.363 Aring and displayed stress well above 2 GPa. Moreover, these films could be heavily doped with P and led to resistivities as low as 0.5 - 1.5 mOmegacm

Matthias Bauer | Chantal Arena | V. Machkauotsan

[1] Short-range order, bulk moduli, and physical trends in c-Si 1-x C x alloys , 1997 .

[2] S. Iyer,et al. Synthesis of Si1−yCy alloys by molecular beam epitaxy , 1992 .

[3] H. J. Osten,et al. SUBSTITUTIONAL CARBON INCORPORATION IN EPITAXIAL SI1-YCY ALLOYS ON SI(001)GROWN BY MOLECULAR BEAM EPITAXY , 1999 .

[4] M. Oehme,et al. Carbon segregation in silicon , 2000 .

[5] A. Fissel,et al. MBE growth kinetics of Si on heavily-doped Si(111):P: a self-surfactant effect , 2000 .

[6] A. V. Drigo,et al. LATTICE PARAMETER IN SI1-YCY EPILAYERS: DEVIATION FROM VEGARD'S RULE , 1998 .

[7] Y. Bogumilowicz,et al. Reduced pressure chemical vapour deposition of SiGe virtual substrates for high mobility devices , 2004 .

[8] P. Ostoja,et al. Lattice parameter study of silicon uniformly doped with boron and phosphorus , 1974 .

[9] P. Werner,et al. Diffusion Engineering by Carbon in Silicon , 2000 .

[10] Kelires Pc. Monte Carlo studies of ternary semiconductor alloys: Application to the Si1-x-yGexCy system. , 1995 .

[11] H. Osten,et al. Substitutional versus interstitial carbon incorporation during pseudomorphic growth of Si1−yCy on Si(001) , 1996 .

[12] R. Truche,et al. High C content Si/Si1−yCy heterostructures for n-type metal oxide semiconductor transistors , 2004 .

[13] Matthias Bauer,et al. Tensile Strained Selective Silicon Carbon Alloys for Recessed Source Drain Areas of Devices , 2006 .