In-growth test for monolithic 3D integrated SRAM

Monolithic three-dimensional integration (M3I) directly fabricates tiers of integrated circuits upon each other and provides millions of vertical interconnections with inter-layer vias (ILVs). It thus brings higher integration density and communication capability compared with three-dimensional stacked integration (3D-SI). However, the Known-Good-Die problem haunting 3D-SI-a faulty tier causes the failure of the entire stack-also occurs in M3I. Lack of efficient test methodologies such as the pre-bond testing in 3D-SI, M3I may have a more significant yield drop and thus its cost may be unacceptable for main-stream adoption. This paper introduces a novel In-growth test method for M3I SRAM. We propose a novel Design-for-Test (DfT) methodology to enable the proposed In-growth test on cell-level partitioned incomplete SRAM cells. We also build a statistical model of cost and discover a prospective judgement to determine whether or not to stop the fabrication, in order to prevent from raising the cost of fabricating more tiers upon the irreparable tiers. We find that a “sweet point” exists in the judgement, which can minimize the overall cost. Experimental results show the effectiveness of our proposed test methodology.