论文信息 - Conduction-band edge discontinuity of InGaAs/GaAsSb heterostructures lattice-matched to InP grown by molecular beam epitaxy

Conduction-band edge discontinuity of InGaAs/GaAsSb heterostructures lattice-matched to InP grown by molecular beam epitaxy

Abstract We report, for the first time, the conduction-band edge discontinuity (ΔE c ) of the InGaAs/GaAsSb staggered lineup heterostructure, lattice-matched to InP, grown by molecular beam epitaxy. From the temperature dependence between 330 and 410 K of current-voltage characteristics of InGaAs/GaAsSb single barrier diodes, we found the ΔE c to be 0.47±0.02 eV. We also determined the energy separation between the conduction-band edge in the InGaAs and the top of the valence-band in the GaAsSb to be 0.25±0.03 eV at room temperature.

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